NEW INTERPRETATION OF STRUCTURE OF THERMALLY GROWN SILICON DIOXIDE

被引：5

作者：

BOYD, IW

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 08期

关键词：

D O I：

10.1049/el:19870299

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：411 / 413

页数：3

共 9 条

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[4] STRUCTURE OF ULTRATHIN SILICON DIOXIDE FILMS [J].

BOYD, IW ;

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APPLIED PHYSICS LETTERS, 1987, 50 (06) :320-322

[5] OPTICAL-CONSTANTS OF QUARTZ, VITREOUS SILICA AND NEUTRON-IRRADIATED VITREOUS SILICA(I) [J].

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JOHNSON, DW .

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[6] OPTICAL-CONSTANTS OF QUARTZ, VITREOUS SILICA AND NEUTRON-IRRADIATED VITREOUS SILICA .2. ANALYSIS OF INFRARED-SPECTRUM OF VITREOUS SILICA [J].

GASKELL, PH ;

JOHNSON, DW .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :171-191

[7] CONDENSATION MODEL PRODUCING CRYSTALLINE OR AMORPHOUS TETRAHEDRAL NETWORKS [J].

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[8]

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[9]

REVESZ AG, 1983, J NON-CRYST SOLIDS, V54, P323, DOI 10.1016/0022-3093(83)90073-X

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