SI-GAP HETEROJUNCTIONS

被引:43
作者
ZEIDENBERGS, G
ANDERSON, RL
机构
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D O I
10.1016/0038-1101(67)90028-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:113 / +
页数:1
相关论文
共 21 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]   GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J].
ANDERSON, RL .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :283-287
[3]  
BOYCE DE, TO BE PUBLISHED
[4]   ALLOYED GERMANIUM-SILICON HETEROJUNCTIONS [J].
BROWNSON, J .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1356-&
[5]  
DUMIN DJ, 1965, J APPL PHYS, V36, P3410
[6]  
FISCHLER S, 1963, AIME METALL SOC C P, V19, P273
[7]   THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J].
KROEMER, H .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11) :1535-1537
[8]   PHOTOCURRENT SPECTRA OF GE-GAAS HETERO-JUNCTIONS [J].
LOPEZ, A ;
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1964, 7 (09) :695-700
[9]  
MADELUNG O, 1964, PHYSICS 3-5 COMPOUNS, P60
[10]   EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J].
MARINACE, JC .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :248-255