Q-SWITCHED SEMICONDUCTOR DIODE-LASERS

被引：41

作者：

TSANG, DZ

WALPOLE, JN

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 02期

关键词：

D O I：

10.1109/JQE.1983.1071839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：145 / 156

页数：12

共 23 条

[11]

LEE TP, 1970, IEEE J QUANTUM ELECT, VQE 6, P339

[12] SPONTANEOUS EMISSION FACTOR OF NARROW-STRIPE GAIN-GUIDED DIODE-LASERS - COMMENT [J].

PATZAK, E .

ELECTRONICS LETTERS, 1982, 18 (06) :278-279

[13] CALCULATED SPONTANEOUS EMISSION FACTOR FOR DOUBLE-HETEROSTRUCTURE INJECTION-LASERS WITH GAIN-INDUCED WAVEGUIDING [J].

PETERMANN, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) :566-570

[14] INTERNAL Q SWITCHING IN GAAS JUNCTION LASERS [J].

RIPPER, JE ;

DYMENT, JC .

APPLIED PHYSICS LETTERS, 1968, 12 (11) :365-&

[15] SPONTANEOUS EMISSION FACTOR OF NARROW-STRIPE GAIN-GUIDED DIODE-LASERS [J].

STREIFER, W ;

SCIFRES, DR ;

BURNHAM, RD .

ELECTRONICS LETTERS, 1981, 17 (24) :933-934

[16] MEASUREMENT OF SPONTANEOUS-EMISSION FACTOR OF ALGAAS DOUBLE-HETEROSTRUCTURE SEMICONDUCTOR-LASERS [J].

SUEMATSU, Y ;

AKIBA, S ;

HONG, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :596-600

[17] INTRA-CAVITY LOSS MODULATION OF GAINASP DIODE-LASERS [J].

TSANG, DZ ;

WALPOLE, JN ;

GROVES, SH ;

HSIEH, JJ ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :120-122

[18] INTRACAVITY-LOSS-MODULATED GAINASP DIODE-LASERS [J].

TSANG, DZ ;

WALPOLE, JN ;

GROVES, SH ;

HSIEH, JJ ;

DONNELLY, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2192-2192

[19]

TSANG DZ, 1981, 3RD INT C INT OPT OP

[20]

TSANG DZ, 1981, THESIS MASS I TECH C

← 1 2 3 →