MODEL FOR EXPANDING SHEATHS AND SURFACE CHARGING AT DIELECTRIC SURFACES DURING PLASMA SOURCE ION-IMPLANTATION

被引:55
作者
EMMERT, GA [1 ]
机构
[1] UNIV WISCONSIN,DEPT NUCL ENGN & ENGN PHYS,MADISON,WI 53706
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词
D O I
10.1116/1.587364
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Plasma source ion implantation utilizes negative high voltage pulses applied to targets immersed in a plasma. This produces an expanding shea which accelerates ions into the target. A model for expanding sheaths at dielectric surfaces is developed; the significant differences between this and metal targets are the finite dielectric constant of the material and accumulation of charge in the nonconducting material. A model is developed for an expanding sheath at a dielectric surface and applied to a polyethylene sheet as an example. The most significant effect is the reduction of the energy at which ions are implanted in the material because of charging at the surface of the polyethylene.
引用
收藏
页码:880 / 883
页数:4
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