PREPARATION AND PROPERTIES OF MICROCRYSTALLINE SILICON FILMS USING PHOTOCHEMICAL VAPOR-DEPOSITION

被引：30

作者：

SAITOH, T ^{[1
]}

SHIMADA, T ^{[1
]}

MIGITAKA, M ^{[1
]}

TARUI, Y ^{[1
]}

机构：

[1] TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN

来源：

关键词：

D O I：

10.1016/0022-3093(83)90271-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：715 / 718

页数：4

共 8 条

[1] ITO H, 1982, 4TH P S DRY PROC IEE, P100
[2] ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS
MATSUDA, A
YAMASAKI, S
NAKAGAWA, K
OKUSHI, H
TANAKA, K
IIZIMA, S
MATSUMURA, M
YAMAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L305 - L308
[3] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE
MISHIMA, Y
HIROSE, M
OSAKA, Y
NAGAMINE, K
ASHIDA, Y
KITAGAWA, N
ISOGAYA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L46 - L48
[4] OKABE H, 1978, PHOTOCHEMISTRY SMALL, P144
[5] PETERS JW, 1982, SPR EL SOC M, P324
[6] OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION
SAITOH, T
MURAMATSU, S
SHIMADA, T
MIGITAKA, M
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 678 - 679
[7] SAITOH T, 1983, JPN J APPL PHYS S, V22, P617
[8] PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY
USUI, S
KIKUCHI, M
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (01) : 1 - 1