INTERPRETATION OF INTRINSIC SURFACE-STATES ON SI(111) SURFACE

被引：10

作者：

NISHIDA, M ^{[1
]}

机构：

[1] KANAZAWA INST TECHNOL,DEPT ELECT ENGN,KANAZAWA 921,JAPAN

来源：

PHYSICS LETTERS A | 1977年 / 63卷 / 02期

关键词：

D O I：

10.1016/0375-9601(77)90223-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：128 / 130

页数：3

共 16 条

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[3] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].

APPELBAUM, JA ;

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[4] EFFECT OF RELAXATION ON ELECTRONIC-ENERGY-LEVEL STRUCTURE OF SI(111) SURFACE [J].

BATRA, IP ;

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[5] BOND ORBITAL MODEL INVESTIGATION OF SURFACE ELECTRONIC-ENERGY STRUCTURE OF SI(111) [J].

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[6] ELECTRONIC-STRUCTURE OF (111) SURFACE OF SEMICONDUCTORS [J].

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TILLER, WA .

PHYSICAL REVIEW B, 1975, 12 (12) :5811-5823

[7]

CIRACI S, 1976, J PHYS C, V9, P4185

[8]

FALICOV LM, 1975, J PHYS C SOLID STATE, V8, P147, DOI 10.1088/0022-3719/8/2/009

[9] ELECTRONIC SURFACE-STRUCTURE OF A TETRAHEDRALLY COORDINATED COVALENT SOLID WITH A SIMPLE 4-STATE HAMILTONIAN [J].

FALICOV, LM ;

YNDURAIN, F .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (10) :1563-1570

[10] CLUSTER MODEL CALCULATIONS FOR CL CHEMISORBED SI AND GE (111) SURFACES BY ITERATIVE EXTENDED HUCKEL THEORY [J].

NISHIDA, M ;

ISHII, N ;

SHIMIZU, T .

PHYSICS LETTERS A, 1977, 60 (02) :148-150

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