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POLY-GATE SIDEWALL OXIDATION INDUCED SUBMICROMETER MOSFET DEGRADATION

被引：10
作者：
PFIESTER, JR
PARRILLO, LC
HAYDEN, JD
SEE, YC
FEJES, P
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 08期
关键词：
D O I：
10.1109/55.31759
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：367 / 369
页数：3
相关论文
共 9 条
[1]  
Ko P. K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P88
[2]   ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS [J].
LAUX, SE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1245-1251
[3]  
Mizuno T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P250
[4]   ANALYSIS OF THE GATE-VOLTAGE-DEPENDENT SERIES RESISTANCE OF MOSFETS [J].
NG, KK ;
LYNCH, WT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) :965-972
[5]  
ORLOWSKI M, 1987, IEDM TECH DIG, P632
[6]  
PARRILLO LC, 1986, IEDM TECH DIG DEC, P44
[7]  
PINTO M, 1984, PISCES USERS MANUAL
[8]   A CAPACITANCE METHOD TO DETERMINE CHANNEL LENGTHS FOR CONVENTIONAL AND LDD MOSFETS [J].
SHEU, BJ ;
KO, PK .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :491-493
[9]  
SUCIU P, 1980, IEEE T ELECTRON DEV, V27, P1540
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