THE ROLE OF HYDROGEN RADICALS IN THE GROWTH OF A-SI AND RELATED ALLOYS

被引：22

作者：

ODA, S

ISHIHARA, S

SHIBATA, N

SHIRAI, H

MIYAUCHI, A

FUKUDA, K

TANABE, A

OHTOSHI, H

HANNA, J

SHIMIZU, I

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 03期

关键词：

D O I：

10.1143/JJAP.25.L188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L188 / L190

页数：3

共 22 条

[1]

CARLSON DE, 1984, SEMICONDUCT SEMIMET, V21, P7

[2] LIGHT-INDUCED EFFECTS IN AMORPHOUS-SILICON ALLOYS - DESIGN OF SOLAR-CELLS WITH IMPROVED STABILITY [J].

GUHA, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1451-1460

[3] NEW MODE OF PLASMA DEPOSITION IN A CAPACITIVELY COUPLED REACTOR [J].

HAMASAKI, T ;

UEDA, M ;

CHAYAHARA, A ;

HIROSE, M ;

OSAKA, Y .

APPLIED PHYSICS LETTERS, 1984, 44 (11) :1049-1051

[4] KINETICS OF ATOMIC-HYDROGEN REACTIONS IN GAS-PHASE [J].

JONES, WE ;

MACKNIGH.SD ;

TENG, L .

CHEMICAL REVIEWS, 1973, 73 (05) :407-440

[5] MICROWAVE PLASMA CVD SYSTEM TO FABRICATE ALPHA-SI THIN-FILMS OUT OF PLASMA [J].

KATO, I ;

WAKANA, S ;

HARA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (01) :L40-L42

[6]

LECOMBER PG, 1984, SEMICONDUCT SEMIMET, V21, P89

[7] HIGHLY PHOTOCONDUCTIVE AMORPHOUS-SILICON PRODUCED BY THERMAL CVD METHOD USING INTERMEDIATE SPECIES SIF2 [J].

MATSUMURA, H ;

IHARA, H ;

TACHIBANA, H ;

TANAKA, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :793-796

[8] HOLE TRANSPORT IN GLOW-DISCHARGE PRODUCED A-SI-H-F FILM [J].

NAKAYAMA, Y ;

AKIYAMA, K ;

HAGA, N ;

KAWAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L703-L705

[9] PREPARATION OF PHOTOCONDUCTIVE A-SIGE ALLOY BY GLOW-DISCHARGE [J].

NOZAWA, K ;

YAMAGUCHI, Y ;

HANNA, J ;

SHIMIZU, I .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :533-536

[10] ELECTRONIC STATES IN GLOW-DISCHARGE A-SIGEX-H-(F) ALLOYS [J].

ODA, S ;

TAKAGI, S ;

SHIMIZU, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (01) :49-52

← 1 2 3 →