ELECTRONIC STATES IN GLOW-DISCHARGE A-SIGEX-H-(F) ALLOYS

被引：11

作者：

ODA, S ^{[1
]}

TAKAGI, S ^{[1
]}

SHIMIZU, I ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,GRAD SCH NAGATSUTA,IMAGING SCI & ENGN LAB,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 01期

关键词：

D O I：

10.1143/JJAP.25.49

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：49 / 52

页数：4

共 9 条

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].

ADLER, D .

PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758

[2] GAP STATE DISTRIBUTION OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS [J].

HUANG, CY ;

GUHA, S ;

HUDGENS, SJ .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :187-192

[3] RECOMBINATION OF PHOTOGENERATED CARRIERS IN DOPED HYDROGENATED AMORPHOUS-SILICON [J].

HVAM, JM ;

BRODSKY, MH .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :551-554

[4] PREPARATION OF PHOTOCONDUCTIVE A-SIGE ALLOY BY GLOW-DISCHARGE [J].

NOZAWA, K ;

YAMAGUCHI, Y ;

HANNA, J ;

SHIMIZU, I .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :533-536

[5]

ODA S, 1984, INT PVSEC, P429

[6] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J].

ORENSTEIN, J ;

KASTNER, M .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1421-1424

[7] THE ELECTRICAL CHARACTERIZATION OF SURFACES, INTERFACES AND CONTACTS TO A-SI-H [J].

STREET, RA ;

THOMPSON, MJ ;

JOHNSON, NM .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (01) :1-17

[8] ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON - DRIFT MOBILITY AND JUNCTION CAPACITANCE [J].

TIEDJE, T ;

WRONSKI, CR ;

ABELES, B ;

CEBULKA, JM .

SOLAR CELLS, 1980, 2 (03) :301-318

[9] A PHYSICAL INTERPRETATION OF DISPERSIVE TRANSPORT IN DISORDERED SEMICONDUCTORS [J].

TIEDJE, T ;

ROSE, A .

SOLID STATE COMMUNICATIONS, 1981, 37 (01) :49-52

← 1 →