ENERGETICS OF ARSENIC DIMERS ON GAAS(001) AS-RICH SURFACES

被引:143
作者
OHNO, T
机构
[1] NTT LSI Laboratories, Kanagawa 243-01, Atsugi-shi
关键词
D O I
10.1103/PhysRevLett.70.631
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The stabilities of GaAs(001) As-rich surfaces have been determined for the first time by state-of-the-art total-energy calculations. The As-rich surface is found to be inherently rough; it cannot exist thermodynamically in a complete As monolayer structure, but in a missing-As-dimer or a two-As-layered structure. The steepening relaxation of the As-dimer block is essential to the stability of the As-rich surface. The peculiar interaction between As dimers is obtained, which may play an important role in the growth mechanism. The validity of the electron counting model is discussed.
引用
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页码:631 / 634
页数:4
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