MECHANISMS OF DEFECT PAIRING IN SEMICONDUCTORS - A STUDY FOR CHALCOGENS IN SILICON

被引：27

作者：

WEINERT, CM

SCHEFFLER, M

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 58卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.58.1456

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1456 / 1459

页数：4

共 15 条

[1] IDENTIFICATION OF CHALCOGEN POINT-DEFECT SITES IN SILICON BY TOTAL-ENERGY CALCULATIONS [J].

BEELER, F ;

SCHEFFLER, M ;

JEPSEN, O ;

GUNNARSSON, O .

PHYSICAL REVIEW LETTERS, 1985, 54 (23) :2525-2528

[2] ELECTRONIC-STRUCTURE OF DEEP SP-BONDED SUBSTITUTIONAL IMPURITIES IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST ;

SCHEFFLER, M .

PHYSICAL REVIEW B, 1982, 26 (10) :5706-5715

[3]

BOURGOIN J, 1982, POINT DEFECTS SEMICO, V1

[4] SELF-CONSISTENT IMPURITY CALCULATIONS IN THE ATOMIC-SPHERES APPROXIMATION [J].

GUNNARSSON, O ;

JEPSEN, O ;

ANDERSEN, OK .

PHYSICAL REVIEW B, 1983, 27 (12) :7144-7168

[5] HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].

JANZEN, E ;

STEDMAN, R ;

GROSSMANN, G ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918

[6]

KRAG WE, 1966, J PHYS SOC JPN, VS 21, P230

[7]

LUDWIG GW, 1965, PHYS REV, V137, P1520

[8]

Madelung O., 1972, FESTKORPERTHEORIE, VIII

[9] MULTIVACANCIES, INTERSTITIALS, AND SELF-INTERSTITIAL MIGRATION IN SILICON [J].

PANTELIDES, ST ;

IVANOV, I ;

SCHEFFLER, M ;

VIGNERON, JP .

PHYSICA B & C, 1983, 116 (1-3) :18-27

[10]

PENSL G, 1986, DEFECTS SEMICONDUCTO, V10, P911

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