INTERFACE EFFECTS ON YBA2CU3O7-DELTA ULTRATHIN-FILM GROWTH MONITORED BY IN-SITU RESISTANCE MEASUREMENT

被引：21

作者：

SHEN, WP

LEHANE, C

ZHENG, JP

KWOK, HS

机构：

[1] New York State Institute on Superconductivity, State University of New York at Buffalo, Amherst

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 23期

关键词：

D O I：

10.1063/1.111330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth dynamics of pulsed laser deposited ultrathin YBa2Cu3O7-delta films on various substrates was explored using an in situ resistance measurement technique. The results indicate that an interface region exists before the onset of uniform growth. On MgO and YSZ substrates, the first 30-50 angstrom has a small contribution to the conductivity of the film. This interface layer is less than one unit cell thick on better lattice-matched substrates, such as SrTiO3, LaAlO3, and CeO2. The thinnest interface layer was found on PrBa2Cu3O7-delta. Misfit strain relaxation and island growth mechanism can be used to explain experimental observations. The superconductivity degradation for ultrathin YBa2Cu3O7-delta films is also discussed. In situ resistance measurement can be an excellent method to study the ultrathin film growth mechanism.

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页码：3175 / 3177

页数：3

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