COMPARISON OF AUGER RECOMBINATION IN GAINAS-ALINAS MULTIPLE QUANTUM-WELL STRUCTURE AND IN BULK GAINAS

被引：55

作者：

SERMAGE, B ^{[1
]}

CHEMLA, DS ^{[1
]}

SIVCO, D ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 06期

关键词：

SEMICONDUCTING GALLIUM COMPOUNDS - Applications - SPECTROSCOPY; AUGER ELECTRON - Applications;

D O I：

10.1109/JQE.1986.1073035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier lifetime has been measured in GaInAs-AlInAs multi-quantum-well structures and in thick GaInAs samples for local carrier densities between 2 multiplied by 10**1 **7 and 5 multiplied by 10**1 **9 cm-**3 . Carrier lifetime and Auger recombination are found to be very close ( plus or minus 20%) in the two structures. The Auger-limited T//0 values calculated for double-heterostructure and multi-quantum-well lasers are found to be, respectively, 93 and 170 K. Optimization of the quantum well laser as a function of the number of wells in the active region is discussed.

引用

页码：774 / 780

页数：7

共 47 条

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