FORMATION OF RECOMBINATION CENTERS IN EPITAXIAL GAAS DUE TO RAPID CHANGES OF THE GROWTH VELOCITY

被引：9

作者：

JASTRZEBSKI, L ^{[1
]}

LAGOWSKI, J ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

10.1149/1.2127483

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：697 / 699

页数：3

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