SOLUTE TRAPPING IN ALUMINUM-ALLOYS

被引:94
作者
SMITH, PM [1 ]
AZIZ, MJ [1 ]
机构
[1] HARVARD UNIV, CAMBRIDGE, MA 02138 USA
来源
ACTA METALLURGICA ET MATERIALIA | 1994年 / 42卷 / 10期
关键词
D O I
10.1016/0956-7151(94)90483-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the first measurements of solute trapping in metallic alloys. The nonequilibrium solute partition coefficient k was measured in several dilute aluminum alloys (Al Cu, Al Ge, Al In, Al Sn). Pulsed laser melting was used to bring about rapid plane-front solidification at velocities of 0.6 5.1 m/s. Time-resolved melt depths and solidification velocities were determined using the transient electrical conductance and optical reflectance techniques. The solute trapping model with the fewest free parameters that accounts for the measured velocity dependence of k is the Continuous Growth Model of Aziz and Kaplan. We have also identified an inverse correlation between the diffusive speed (the only free parameter in that model) and the equilibrium partition coefficient; this correlation might be used to estimate diffusive speeds for systems in which it has not been measured. A possible origin of such a correlation is discussed.
引用
收藏
页码:3515 / 3525
页数:11
相关论文
共 36 条
[1]  
[Anonymous], 1982, LASER ANNEALING SEMI
[2]  
ATWATER HA, 1990, MATER RES SOC SYMP P, V157, P369
[3]   TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].
AUSTON, DH ;
SURKO, CM ;
VENKATESAN, TNC ;
SLUSHER, RE ;
GOLOVCHENKO, JA .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440
[4]   SOLUTE TRAPPING - COMPARISON OF THEORY WITH EXPERIMENT [J].
AZIZ, MJ ;
TSAO, JY ;
THOMPSON, MO ;
PEERCY, PS ;
WHITE, CW .
PHYSICAL REVIEW LETTERS, 1986, 56 (23) :2489-2492
[5]   SOLUTE TRAPPING IN SILICON BY LATERAL MOTION OF (111) LEDGES [J].
AZIZ, MJ ;
WHITE, CW .
PHYSICAL REVIEW LETTERS, 1986, 57 (21) :2675-2678
[6]   CONTINUOUS GROWTH-MODEL FOR INTERFACE MOTION DURING ALLOY SOLIDIFICATION [J].
AZIZ, MJ ;
KAPLAN, T .
ACTA METALLURGICA, 1988, 36 (08) :2335-2347
[7]  
AZIZ MJ, 1985, 1985 EN BEAM SOL INT
[8]  
AZIZ MJ, 1985, MATER RES SOC S P, V35, P153
[9]  
BAKER JC, 1969, ACTA METALL, V17, P565
[10]   IONIC CONDUCTIVITY OF TANTALUM OXIDE AT VERY HIGH FIELDS [J].
BEAN, CP ;
FISHER, JC ;
VERMILYEA, DA .
PHYSICAL REVIEW, 1956, 101 (02) :551-554