OXYGEN PRECIPITATION RETARDATION AND RECOVERY PHENOMENA IN CZOCHRALSKI SILICON - EXPERIMENTAL-OBSERVATIONS, NUCLEI DISSOLUTION MODEL, AND RELEVANCY WITH NUCLEATION ISSUES

被引：67

作者：

TAN, TY ^{[1
]}

KUNG, CY ^{[1
]}

机构：

[1] NATL SEMICOND CORP,SANTA CLARA,CA 95051

来源：

关键词：

D O I：

10.1063/1.336564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：917 / 931

页数：15

共 52 条

[1]

[Anonymous], 1970, PHASE TRANSFORMATION

[2]

BISCHOFF BK, 1984, Patent No. 4437922

[3] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].

BOURRET, A ;

THIBAULTDESSEAUX, J ;

SEIDMAN, DN .

[4]

BULLIS WM, 1983, DEFECTS SILICON

[5]

BURKE J, 1965, KINETICS PHASE TRANS, pCH5

[6]

CRAVEN RA, 1985, MATER RES SOC S P, V36, P159

[7]

CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254

[8]

DEKOCK AJR, 1983, AGGREGATION PHENOMEN, P58

FAHEY, P ;

DUTTON, RW ;

HU, SM .

[10]

FAIR RB, 1985, MATERIALS RES SOC P, V36