OXYGEN PRECIPITATION RETARDATION AND RECOVERY PHENOMENA IN CZOCHRALSKI SILICON - EXPERIMENTAL-OBSERVATIONS, NUCLEI DISSOLUTION MODEL, AND RELEVANCY WITH NUCLEATION ISSUES

被引：67

作者：

TAN, TY ^{[1
]}

KUNG, CY ^{[1
]}

机构：

[1] NATL SEMICOND CORP,SANTA CLARA,CA 95051

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.336564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：917 / 931

页数：15

共 52 条

[41] THERMALLY INDUCED DEFECT BEHAVIOR AND EFFECTIVE INTRINSIC GETTERING SINK IN SILICON-WAFERS [J].

SHIMURA, F ;

TSUYA, H ;

KAWAMURA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1579-1583

[42] ELIMINATION OF STACKING-FAULTS IN SILICON WAFERS BY HCL ADDED DRY O2 OXIDATION [J].

SHIRAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (06) :747-752

[43]

Simmons J.H., 1982, ADV CERAMICS, V4

[44] INTERSTITIAL SUPERSATURATION NEAR PHOSPHORUS-DIFFUSED EMITTER ZONES IN SILICON [J].

STRUNK, H ;

GOSELE, U ;

KOLBESEN, BO .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :530-532

[45] OXYGEN PRECIPITATION AND GENERATION OF DISLOCATIONS IN SILICON [J].

TAN, TY ;

TICE, WK .

PHILOSOPHICAL MAGAZINE, 1976, 34 (04) :615-631

[46] POINT-DEFECTS, DIFFUSION-PROCESSES, AND SWIRL DEFECT FORMATION IN SILICON [J].

TAN, TY ;

GOSELE, U .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 37 (01) :1-17

[47] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

TAN, TY ;

GARDNER, EE ;

TICE, WK .

APPLIED PHYSICS LETTERS, 1977, 30 (04) :175-176

[48] KINETICS OF SILICON STACKING-FAULT GROWTH SHRINKAGE IN AN OXIDIZING AMBIENT CONTAINING A CHLORINE COMPOUND [J].

TAN, TY ;

GOSELE, U .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4767-4778

[49] NUCLEATION OF STACKING-FAULTS AT OXIDE PRECIPITATE-DISLOCATION COMPLEXES IN SILICON [J].

TAN, TY ;

WU, LL ;

TICE, WK .

APPLIED PHYSICS LETTERS, 1976, 29 (12) :765-767

[50] PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].

TEMPELHOFF, K ;

SPIEGELBERG, F ;

GLEICHMANN, R ;

WRUCK, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01) :213-223

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