MICROSCOPIC-SCALE LATERAL INHOMOGENEITIES OF THE GASE-GE HETEROJUNCTION ENERGY LINEUP

被引：14

作者：

GOZZO, F ^{[1
]}

BERGER, H ^{[1
]}

COLLINS, IR ^{[1
]}

MARGARITONDO, G ^{[1
]}

NG, W ^{[1
]}

RAYCHAUDHURI, AK ^{[1
]}

LIANG, S ^{[1
]}

SINGH, S ^{[1
]}

CERRINA, F ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR XRAY LITHOG,MADISON,WI 53706

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.51.5024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning-photoemission-spectromicroscopy data revealed substantial inhomogeneities in the lineup of the electronic states at the interface between the two semiconductors GaSe and Ge. These inhomogeneities would lead to valence-band discontinuity changes from place to place, whose magnitude is approximately 0.4 eV. © 1995 The American Physical Society.

引用

页码：5024 / 5027

页数：4

共 18 条

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