ALKALINE-METALS-SILICON SCHOTTKY BARRIERS

被引：8

作者：

SZYDLO, N ^{[1
]}

POIRIER, R ^{[1
]}

机构：

[1] THOMSON CSF,CTR CORBEVILLE,LAB CENT RECH,ORSAY 91401,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.1662359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1386 / 1387

页数：2

共 10 条

[1]

ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[2] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[3] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES [J].

CROWELL, CR ;

SHORE, HB ;

LABATE, EE .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3843-&

[4]

LEPSELTER MP, 1967, OHMIC CONTACTS SEMIC, P159

[5] ON METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MONCH, W .

SURFACE SCIENCE, 1970, 21 (02) :443-&

[6] SURFACE STATES ON CLEAN AND ON CESIUM-COVERED CLEAVED SILICON SURFACES [J].

MONCH, W .

PHYSICA STATUS SOLIDI, 1970, 40 (01) :257-&

[7]

SMITH BL, 1970, SOLID STATE ELECTRON, V14, P71

[8] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J].

SPITZER, WG ;

MEAD, CA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :3061-+

[9] REVERSE I-V CHARACTERISTICS OF NA-SI SCHOTTKY BARRIER [J].

SZYDLO, N ;

POIRIER, R ;

KLEEFSTRA, M .

APPLIED PHYSICS LETTERS, 1970, 17 (11) :477-+

[10] DENSITY OF STATES AND BARRIER HEIGHT OF METAL-SI CONTACTS [J].

YNDURAIN, F .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (17) :2849-&

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