USE OF THE LATERAL PHOTOEFFECT TO STUDY SAMPLE QUALITY IN GAAS/ALGAAS HETEROSTRUCTURES

被引：14

作者：

FONTEIN, PF

HENDRIKS, P

WOLTER, J

PEAT, R

WILLIAMS, DE

ANDRE, JP

机构：

[1] UKAEA,HARWELL LAB,HARWELL OX11 0RA,BERKS,ENGLAND

[2] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3085 / 3088

页数：4

共 7 条

[1]

ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1103

[2] QUANTIZED HALL-EFFECT [J].

AOKI, H .

REPORTS ON PROGRESS IN PHYSICS, 1987, 50 (06) :655-730

[3] TOPOGRAPHY OF ALGAAS/GAAS HETEROSTRUCTURES USING FIELD-EFFECT LIQUID-CRYSTALS [J].

HENDRIKS, P ;

DEKORT, K ;

HORSTMAN, RE ;

ANDRE, JP ;

FOXON, CT ;

WOLTER, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) :521-524

[4] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS [J].

HIRAKAWA, K ;

SAKAKI, H .

PHYSICAL REVIEW B, 1986, 33 (12) :8291-8303

[5] PHOTOEFFECTS IN NONUNIFORMLY IRRADIATED P-N JUNCTIONS [J].

LUCOVSKY, G .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :1088-1095

[6] A NEW SEMICONDUCTOR PHOTOCELL USING LATERAL PHOTOEFFECT [J].

WALLMARK, JT .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (04) :474-483

[7] THEORY OF OPTICAL BEAM INDUCED CURRENT IMAGES OF DEFECTS IN SEMICONDUCTORS [J].

WILSON, T ;

MCCABE, EM .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :191-195

← 1 →