DESIGN APPROACH TO RADIATION-HARDENED I2L GATE ARRAYS

被引：6

作者：

BAHRAMAN, A

CHANG, S

ROMEO, D

SCHUEGRAF, K

机构：

来源：

关键词：

D O I：

10.1109/TNS.1978.4329560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1494 / 1501

页数：8

共 6 条

[1] RADIATION-HARDENED PERFORMANCE-OPTIMIZED I2L LSI [J].

BAHRAMAN, A ;

CHANG, S ;

ROMEO, D ;

SCHUEGRAF, K ;

WONG, T .

[2] RADIATION HARDENED LSI FOR 1980S - CMOS-SOS VS I2L [J].

DONOVAN, RP ;

SIMONS, M ;

BURGER, RM .

[3]

KLASSEN FM, 1975, IEEE T ELECTRON DEV, V22, P145

[4] RADIATION EFFECTS MODELING AND EXPERIMENTAL-DATA ON I2L DEVICES [J].

LONG, DM ;

REPPER, CJ ;

RAGONESE, LJ ;

YANG, NT .

[5]

MCGREIVY D, 1976 IEDM WASH

[6] COMPARATIVE EVALUATION OF INTEGRATED INJECTION LOGIC [J].

RAYMOND, JP ;

PEASE, RL .