RADIATION-HARDENED PERFORMANCE-OPTIMIZED I2L LSI

被引:5
作者
BAHRAMAN, A
CHANG, S
ROMEO, D
SCHUEGRAF, K
WONG, T
机构
关键词
D O I
10.1109/TNS.1977.4329215
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2321 / 2326
页数:6
相关论文
共 13 条
[1]  
BAHRAMAN A, 1976, GOMAC
[2]   INVESTIGATION OF LATERAL TRANSISTORS - DC CHARACTERISTICS [J].
CHOU, S .
SOLID-STATE ELECTRONICS, 1971, 14 (09) :811-&
[3]  
CURTIS OL, 1976, IEEE T NUCL SCI, V14, P68
[4]  
DUTTON R, 1959, IEEE T ELECTRON DEVI, V16, P458
[5]   APPLICATION OF NEUTRON DAMAGE MODELS TO SEMICONDUCTOR DEVICE STUDIES [J].
GREGORY, BL ;
GWYN, CW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :325-+
[6]  
ILES PA, 1975, 11TH IEEE PHOT SPEC
[7]   DEVICE PHYSICS OF INTEGRATED INJECTION LOGIC [J].
KLAASSEN, FM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (03) :145-152
[8]  
LONG D, 1976, RADIATION EFFECTS C
[9]   RADIATION-DAMAGE TO INTEGRATED INJECTION LOGIC CELLS [J].
PEASE, RL ;
GALLOWAY, KF ;
STEHLIN, RA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2600-2604
[10]   RADIATION EFFECTS ON BIPOLAR INTEGRATED INJECTION LOGIC [J].
RAYMOND, JP ;
WONG, TY ;
SCHUEGRAF, KK .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2605-2610