GROWTH-KINETICS, IMPURITY INCORPORATION, DEFECT GENERATION, AND INTERFACE QUALITY OF MOLECULAR-BEAM EPITAXY GROWN ALGAAS/GAAS QUANTUM WELLS - ROLE OF GROUP-III AND GROUP-V FLUXES

被引：19

作者：

MUNNIX, S

BAUER, RK

BIMBERG, D

HARRIS, JS

KOHRBRUCK, R

LARKINS, EC

MAIERHOFER, C

MARS, DE

MILLER, JN

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

[2] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：704 / 709

页数：6

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