ELECTRONIC-STRUCTURE OF IMPURITIES IN TRANSITION-METALS

被引：19

作者：

DEDERICHS, PH ^{[1
]}

ZELLER, R ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-5170 JULICH 1, FED REP GER

来源：

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1981年 / 21卷

关键词：

D O I：

10.1007/BFb0108607

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：243 / 269

页数：27

共 115 条

[1] CLUSTER MODEL FOR ELECTRONIC-STRUCTURE AND BONDING MECHANISM OF INTERSTITIAL HYDROGEN IN IRON SERIES TRANSITION-METALS [J].

ADACHI, H ;

IMOTO, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 46 (04) :1194-1200

[2] SPHERICAL-SOLID MODEL - APPLICATION TO X-RAY EDGES IN LI, NA, AND AL [J].

ALMBLADH, CO ;

BARTH, UV .

PHYSICAL REVIEW B, 1976, 13 (08) :3307-3319

[3] SCREENING OF A PROTON IN AN ELECTRON-GAS [J].

ALMBLADH, CO ;

BARTH, UV ;

POPOVIC, ZD ;

STOTT, MJ .

PHYSICAL REVIEW B, 1976, 14 (06) :2250-2254

[4] LOCALIZED MAGNETIC STATES IN METALS [J].

ANDERSON, PW .

PHYSICAL REVIEW, 1961, 124 (01) :41-&

[5]

ANDREWS PT, 1980, C SERIES I PHYSICS, V55, P141

[6] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[7] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979

[8] DENSITY OF ELECTRONS IN A PERFECT OR IMPERFECT LATTICE [J].

BEEBY, JL .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1967, 302 (1468) :113-&

[9] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899

[10] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562

← 1 2 3 4 5 6 7 8 9 10 →