CO-60 RADIATION EFFECTS ON LASER ANNEALED SILICON ON SAPPHIRE

被引:4
作者
GUPTA, A
CHI, YM
VALDEZ, JB
OLSON, GL
HESS, LD
机构
关键词
D O I
10.1109/TNS.1981.4335678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:4080 / 4082
页数:3
相关论文
共 5 条
[1]   ELECTRON-MOBILITY IN SOS FILMS [J].
HSU, ST .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :913-916
[2]  
JOHNSON NM, 1978, S H MAT RES SOC ANN
[3]  
KOBAYASHI Y, 1980, FAL EL SOC M HOLL, P1195
[4]   STRESS-RELIEVED REGROWTH OF SILICON ON SAPPHIRE BY LASER ANNEALING [J].
SAIHALASZ, GA ;
FANG, FF ;
SEDGWICK, TO ;
SEGMULLER, A .
APPLIED PHYSICS LETTERS, 1980, 36 (06) :419-422
[5]   LASOS - LASER ANNEALED SILICON ON SAPPHIRE [J].
YARON, G ;
HESS, LD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) :573-578