ELECTRONIC DEFECTS INDUCED IN SILICON BY SF6 PLASMA-ETCHING

被引：9

作者：

BELKACEM, A ^{[1
]}

ANDRE, E ^{[1
]}

OBERLIN, JC ^{[1
]}

POMOT, C ^{[1
]}

PAJOT, B ^{[1
]}

CHANTRE, A ^{[1
]}

机构：

[1] UNIV J FOURIER,CTR NATL ETUD TELECOMMUN,PHYS MILIEUX IONISES LAB,F-38243 MEYLAN,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90285-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：451 / 455

页数：5

共 16 条

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[10] EXPERIMENTAL-EVIDENCE FOR BORON-HYDROGEN INTERACTION IN BORON-DOPED SILICON PASSIVATED WITH HYDROGEN [J].

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