PHOTOLUMINESCENCE DECAY OF 1.54 MU-M ER-3+ EMISSION IN SI AND III-V SEMICONDUCTORS

被引：21

作者：

KLEIN, PB ^{[1
]}

POMRENKE, GS ^{[1
]}

机构：

[1] USAF,INST TECHNOL,WRIGHT PATTERSON AFB,OH 45433

来源：

关键词：

D O I：

10.1049/el:19881025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1502 / 1503

页数：2

共 10 条

[1] DIETRICH HB, 1985, P SOC PHOTO-OPT INST, V530, P195, DOI 10.1117/12.946487
[2] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
ENNEN, H
SCHNEIDER, J
POMRENKE, G
AXMANN, A
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[3] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS
ENNEN, H
KAUFMANN, U
POMRENKE, G
SCHNEIDER, J
WINDSCHEIF, J
AXMANN, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 165 - 168
[4] ENNEN H, 1985, DEFECTS SEMICONDUCTO, P115
[5] TIME RESOLVED PHOTOLUMINESCENCE FROM YB-3+ CENTERS IN INP-YB
KLEIN, PB
[J]. SOLID STATE COMMUNICATIONS, 1988, 65 (10) : 1097 - 1101
[6] KORBER W, 1988, APPL PHYS LETT, V52, P114, DOI 10.1063/1.99067
[7] Kozhan T. M., 1984, Journal of Applied Spectroscopy, V41, P1341, DOI 10.1007/BF00659309
[8] LACKSHAN SVJ, 1987, J NONCRYSTALLINE SOL, V94, P222
[9] PHOTOLUMINESCENCE CHARACTERIZATION OF RARE-EARTH (ER,YB)-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
TAKAHEI, K
UWAI, K
NAKAGOME, H
[J]. JOURNAL OF LUMINESCENCE, 1988, 40-1 : 901 - 902
[10] ERBIUM-DOPED GAAS LIGHT-EMITTING-DIODES EMITTING ERBIUM F-SHELL LUMINESCENCE AT 1.54-MU-M
WHITNEY, PS
UWAI, K
NAKAGOME, H
TAKAHEI, K
[J]. ELECTRONICS LETTERS, 1988, 24 (12) : 740 - 741