ERBIUM-DOPED GAAS LIGHT-EMITTING-DIODES EMITTING ERBIUM F-SHELL LUMINESCENCE AT 1.54-MU-M

被引：52

作者：

WHITNEY, PS

UWAI, K

NAKAGOME, H

TAKAHEI, K

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 12期

关键词：

D O I：

10.1049/el:19880499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：740 / 741

页数：2

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[7] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS
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