ACTIVATION OF A MULTI-EMITTER SILICON CARBIDE P-N JUNCTION COLD CATHODE

被引：4

作者：

BELLAU, RV

CHANTER, RA

DARGAN, CL

机构：

来源：

关键词：

D O I：

10.1088/0022-3727/4/12/328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2022 / &

共 8 条

[1]

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[2]

BRANDER RW, 1969, MATER RES B, V4, pS303

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DOBROTT, JR ;

OMAN, RM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (01) :214-&

[4]

FRIDEL I, 1964, SOV PHYS-SOL STATE, V5, P1418

[5] ELECTRON EMISSION FROM BREAKDOWN REGIONS IN SIC P-N JUNCTIONS [J].

PATRICK, L ;

CHOYKE, WJ .

[6]

SAY DL, 1970, INFORMATION DISPLAY, V7, P29

[7]

TODKILL A, 1969, MATER RES B, V4, pS293

[8] A SENSITIVE HIGH VACUUM GAUGE USING AN ELECTRON MULTIPLIER [J].

WINDSOR, EE .