EFFECT OF PLASTIC-DEFORMATION ON THE EPR-SPECTRUM OF SEMI-INSULATING GAAS-CR

被引：22

作者：

WOSINSKI, T ^{[1
]}

机构：

[1] UNIV COLOGNE,INST PHYS 2,MET PHYS ABT,D-5000 COLOGNE 41,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 60卷 / 02期

关键词：

D O I：

10.1002/pssa.2210600250

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K149 / K152

页数：4

共 10 条

[1] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J].

GOTTSCHALK, H ;

PATZER, G ;

ALEXANDER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :207-217

[2] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J].

HUBER, AM ;

LINH, NT ;

VALLADON, M ;

DEBRUN, JL ;

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4022-4026

[3] STUDY OF DEFORMATION-PRODUCED DEEP LEVELS IN N-GAAS USING DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY [J].

ISHIDA, T ;

MAEDA, K ;

TAKEUCHI, S .

APPLIED PHYSICS, 1980, 21 (03) :257-261

[4] EPR OF CR(3D3) IN GAAS - EVIDENCE FOR STRONG JAHN-TELLER EFFECTS [J].

KREBS, JJ ;

STAUSS, GH .

PHYSICAL REVIEW B, 1977, 15 (01) :17-22

[5] EPR OF CR2+(3D4) IN GALLIUM-ARSENIDE - JAHN-TELLER DISTORTION AND PHOTOINDUCED CHARGE CONVERSION [J].

KREBS, JJ ;

STAUSS, GH .

PHYSICAL REVIEW B, 1977, 16 (03) :971-973

[6] PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-CR [J].

LIN, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :1859-1867

[7]

MIRCEA A, 1979, J PHYSIQUE LETT, V40, P31

[8]

NAKATA H, UNPUBLISHED

[9]

STAUSS GH, UNPUBLISHED

[10]

WOSINSKI T, 1980, 10 SCH SEM COMP JASZ

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