MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAP SUBSTRATES

被引：8

作者：

MITSUISHI, I

MITSUHASHI, H

KUKIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 02期

关键词：

D O I：

10.1143/JJAP.28.L275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L275 / L277

页数：3

共 13 条

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