EXCITONS BOUND TO AN ISOELECTRONIC TRAP IN SILICON

被引:25
作者
WEBER, J
SCHMID, W
SAUER, R
机构
[1] Physikalisches Institut der Universität Stuttgart
关键词
D O I
10.1016/0022-2313(79)90080-2
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Three novel emission lines in silicon. A, B, and C, are reported which are associated with an exciton bound to an isoelectronic trap. We deduce this interpretation from temperature dependent measurements as well as from Zeeman-, piezo-, and time-resolved spectroscopy. The binding center is assumed to involve carbon. © 1979.
引用
收藏
页码:93 / 96
页数:4
相关论文
共 9 条