共 9 条
- [1] Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4
- [2] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &
- [3] Dean P. J., 1973, Journal of Luminescence, V7, P51, DOI 10.1016/0022-2313(73)90059-8
- [4] ZEEMAN EFFECT AND CRYSTAL-FIELD SPLITTING OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1969, 185 (03): : 1064 - &
- [6] BOUND EXCITON LIFETIMES FOR ACCEPTORS IN SI [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (07) : 425 - 428
- [7] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC NITROGEN TRAP IN GAP [J]. PHYSICAL REVIEW, 1969, 188 (03): : 1228 - &
- [8] AUGER TRANSITION RATES FOR EXCITONS BOUND TO ACCEPTORS IN SI AND GE [J]. PHYSICAL REVIEW B, 1977, 16 (12): : 5426 - 5435
- [9] AUGER LIFETIMES FOR EXCITONS BOUND TO NEUTRAL DONORS AND ACCEPTORS IN SI [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 84 (02): : 529 - 540