CRYSTALLOGRAPHIC NATURE AND FORMATION MECHANISMS OF HIGHLY IRREGULAR STRUCTURE IN IMPLANTED AND ANNEALED SI LAYERS

[1] BAITHER D, 1975, INT C ION IMPLANTATI, P155

[2] BOURGOIN JC, 1973, J CHEM PHYS, V59, P4042, DOI [10.1063/1.1680596, 10.1063/1.433143]

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] DAVIDSON SM, 1970, P EUROPEAN C ION IMP, P19

[6] GERASIMENKO NN, 1975, FIZ TEKH POLUPROV, V5, P1700

[7] Gotz G., 1977, Experimentelle Technik der Physik, V25, P71

[8] GOTZ G, 1975, 6 T VSES SOV FIZ VZA, P513

[9] HIRSH PB, 1965, TRANSMISSION ELECTRO

[10] EPITAXIAL GROWTH OF METALS ON ROCKSALT FACES CLEAVED IN VACUUM .2. ORIENTATION AND STRUCTURE OF GOLD PARTICLES FORMED IN ULTRAHIGH VACUUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (02) : 346 - &

[1] BAITHER D, 1975, INT C ION IMPLANTATI, P155

[2] BOURGOIN JC, 1973, J CHEM PHYS, V59, P4042, DOI [10.1063/1.1680596, 10.1063/1.433143]

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] DAVIDSON SM, 1970, P EUROPEAN C ION IMP, P19

[6] GERASIMENKO NN, 1975, FIZ TEKH POLUPROV, V5, P1700

[7] Gotz G., 1977, Experimentelle Technik der Physik, V25, P71

[8] GOTZ G, 1975, 6 T VSES SOV FIZ VZA, P513

[9] HIRSH PB, 1965, TRANSMISSION ELECTRO

[10] EPITAXIAL GROWTH OF METALS ON ROCKSALT FACES CLEAVED IN VACUUM .2. ORIENTATION AND STRUCTURE OF GOLD PARTICLES FORMED IN ULTRAHIGH VACUUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (02) : 346 - &