THRESHOLD-VOLTAGE TEMPERATURE DRIFT IN ION-IMPLANTED MOS-TRANSISTORS

被引：7

作者：

SONG, BS

GRAY, PR

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：661 / 668

页数：8

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