TEMPERATURE DEPENDENCE OF N-TYPE MOS TRANSISTORS

[1] BURNS JR, 1964, RCA REV

[2] CARRIER SURFACE SCATTERING IN SILICON INVERSION LAYERS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 410 - &

[3] HEIMAN FP, 1965, IEEE T ELECTRON DEVI, VED12

[4] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[5] HOFSTEIN SR, 1965, SOLIDSTATE ELECTRONI

[6] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720

[7] LATERAL AC CURRENT FLOW MODEL FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 108 - +

[8] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[9] ZAININGER KH, 1965, IEEE T ELECTRON DEVI, VED12

[10] 1964, IBM J RES DEVELOPM, V8

[1] BURNS JR, 1964, RCA REV

[2] CARRIER SURFACE SCATTERING IN SILICON INVERSION LAYERS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 410 - &

[3] HEIMAN FP, 1965, IEEE T ELECTRON DEVI, VED12

[4] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[5] HOFSTEIN SR, 1965, SOLIDSTATE ELECTRONI

[6] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720

[7] LATERAL AC CURRENT FLOW MODEL FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 108 - +

[8] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[9] ZAININGER KH, 1965, IEEE T ELECTRON DEVI, VED12

[10] 1964, IBM J RES DEVELOPM, V8