EXCITON ELECTROABSORPTION AT ROOM-TEMPERATURE IN INGAAS/INP MULTIQUANTUM-WELL STRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOCVD

被引：12

作者：

MOSELEY, AJ

SCOTT, MD

WILLIAMS, PJ

WALLIS, RH

DAVIES, JI

RIFFAT, JR

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 10期

关键词：

D O I：

10.1049/el:19870373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：516 / 518

页数：3

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[6] HIGH-TEMPERATURE EXCITONS AND ENHANCED ELECTROABSORPTION IN INGAAS/INALAS MULTIPLE QUANTUM WELLS
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