WAVEFORM STABILITY OF A TRAVELING HIGH-FIELD DOMAIN IN A GUNN DIODE

被引:1
作者
MAGINU, K
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D O I
10.1016/0022-247X(78)90204-4
中图分类号
O29 [应用数学];
学科分类号
070104 ;
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页码:85 / 109
页数:25
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共 12 条
[1]   INFLUENCE OF BOUNDARY CONDITIONS ON HIGH-FIELD DOMAINS IN GUNN DIODES [J].
BOER, KW ;
DOHLER, G .
PHYSICAL REVIEW, 1969, 186 (03) :793-&
[2]  
Coddington E. A., 1955, THEORY ORDINARY DIFF
[3]  
COURANT R, 1953, METHODS MATH PHYSICS, V1
[4]  
Friedman A., 1964, PARTIAL DIFFERENTIAL
[5]   FORM AND STABILITY OF ELECTRIC-FIELD PROFILES WITHIN A NEGATIVE DIFFERENTIAL MOBILITY SEMICONDUCTOR [J].
GRUBIN, HL ;
SHAW, MP ;
SOLOMON, PR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) :63-78
[6]   MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].
GUNN, JB .
SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91
[8]  
GUNN JB, 1964, S PLASMA EFFECTS SOL
[9]   THEORY OF GUNN EFFECT [J].
KNIGHT, BW ;
PETERSON, GA .
PHYSICAL REVIEW, 1967, 155 (02) :393-+