IMPEDANCE AND SWITCHING OF GAAS P-I-N-DIODES

被引：3

作者：

ABID, Z

GOPINATH, A

机构：

[1] Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55454

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 10期

关键词：

D O I：

10.1109/22.58698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

The impedance of GaAs p-i-n diodes under forward bias is modeled using the two-dimensional simulation program PISCES. The capacitance and resistance, representing the parallel equivalent circuit of the diode, are constant over a wide frequency range. The switching transient of the p-i-n diode is also modeled and it is found that switching time is determined by the sweep out time of the carriers and not by the carrier lifetime. © 1990 IEEE

引用

页码：1526 / 1528

页数：3