A MODEL FOR THE SUBMICROMETER N-CHANNEL DEEP-DEPLETION SOS-MOSFET

被引：5

作者：

JERDONEK, RT ^{[1
]}

BANDY, WR ^{[1
]}

BIRNBAUM, J ^{[1
]}

机构：

[1] US DEPT DEF,FT MEAD,MD

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1566 / 1570

页数：5

共 13 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[2] CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J].

HOFSTEIN, SR ;

WARFIELD, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :129-+

[3]

HSU ST, 1975, RCA REV, V36, P240

[4] MODELING OPERATION OF NORMAL-CHANNEL DEEP-DEPLETION SOS-MOSFET [J].

JERDONEK, RT ;

BANDY, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :899-907

[5] VELOCITY SATURATION EFFECTS IN N-CHANNEL DEEP-DEPLETION SOS-MOSFETS [J].

JERDONEK, RT ;

BANDY, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :894-898

[6]

JERDONEK RT, UNPUBLISHED

[7]

MOTTA RF, 1976, THESIS U FLORIDA GAI, P10

[8] 2-MUM SILICON-GATE C-MOS-SOS TECHNOLOGY [J].

SPLINTER, MR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :996-1004

[9]

SPRINKLE SC, 1980, THESIS U MARYLAND CO

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P431

← 1 2 →