SELF-OSCILLATIONS OF THE CURRENT IN DOPED SEMICONDUCTOR SUPERLATTICES

被引：67

作者：

GRAHN, H ^{[1
]}

KASTRUP, J ^{[1
]}

PLOOG, K ^{[1
]}

BONILLA, L ^{[1
]}

GALAN, J ^{[1
]}

KINDELAN, M ^{[1
]}

MOSCOSO, M ^{[1
]}

机构：

[1] UNIV CARLOS MADRID 3, ESCUELA POLITECN SUPER, E-28911 LEGANES, SPAIN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 8B期

关键词：

SUPERLATTICES; NONLINEAR DYNAMICS; ELECTRIC-FIELD DOMAINS; RESONANT TUNNELING;

D O I：

10.1143/JJAP.34.4526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-sustained current oscillations have been found in doped GaAs-AlAs superlattices and are investigated experimentally and theoretically, The electric-field distribution in doped superlattices becomes unstable if the carrier density is not sufficiently large to form stable domains. The instability results in self-oscillations of the current, which are due to an oscillatory motion of the domain boundary in the superlattice. A discrete drift model taking into account several regions of negative differential velocity and a large electron density clearly establishes the origin of these oscillations.

引用

页码：4526 / 4528

页数：3

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