LOW-TEMPERATURE ELECTROPLATED AU-SNNI-AU OHMIC CONTACTS ON N-TYPE GAAS

被引：3

作者：

KELLY, WM

WRIXON, GT

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 04期

关键词：

D O I：

10.1049/el:19780054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：80 / 81

页数：2

共 10 条

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[3]

Healy M. P., 1976, IEEE Transactions on Electron Devices, VED-23

[4] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J].

HEIME, K ;

KONIG, U ;

KOHN, E ;

WORTMANN, A .

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WANDINGE.L .

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[6]

LOWENHEIM FA, 1973, METAL FINISHING GUID

[7] CONTACT RESISTANCES OF SEVERAL METALS AND ALLOYS TO GAAS [J].

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ADAMS, MF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) :709-&

[8] METALLIC CONTACTS FOR GALLIUM ARSENIDE [J].

PAOLA, CR .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1189-+

[9] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J].

ROBINSON, GY .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :331-&

[10]

YOKOYAMA Y, 1975, JAPAN J APPL PHYS, V14, P1071

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