KINETICS OF HYDROGEN DESORPTION FROM SI(100) AND SI(111) SURFACES FOLLOWING CHEMISORPTION OF DISILANE AND TRISILANE

被引:15
作者
SHARP, JW [1 ]
ERES, G [1 ]
机构
[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831
关键词
D O I
10.1016/0039-6028(94)00515-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The kinetics of hydrogen desorption from Si(100) and Si(111) surfaces during epitaxial silicon thin film growth from disilane and trisilane was investigated using differential surface reflectance. For both source molecules, first-order hydrogen desorption was observed from Si(100), and an intermediate reaction order was found on Si(111).
引用
收藏
页码:169 / 173
页数:5
相关论文
共 29 条
[1]   REFLECTANCE DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH TRANSIENTS ON (001) GAAS [J].
ASPNES, DE ;
BHAT, R ;
COLAS, E ;
KERAMIDAS, VG ;
KOZA, MA ;
STUDNA, AA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :711-716
[2]   SCANNING TUNNELING MICROSCOPY STUDY OF THE ADSORPTION AND RECOMBINATIVE DESORPTION OF HYDROGEN FROM THE SI(100)-2X1 SURFACE [J].
BOLAND, JJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :2458-2464
[3]   THE IMPORTANCE OF STRUCTURE AND BONDING IN SEMICONDUCTOR SURFACE-CHEMISTRY - HYDROGEN ON THE SI(111)-7X7 SURFACE [J].
BOLAND, JJ .
SURFACE SCIENCE, 1991, 244 (1-2) :1-14
[4]   ELLIPSOMETRY IN SUB-MONOLAYER REGION [J].
BOOTSMA, GA ;
MEYER, F .
SURFACE SCIENCE, 1969, 14 (01) :52-&
[5]   THERMAL AND ELECTRON-BEAM-INDUCED REACTION OF DISILANE ON SI(100)-(2X1) [J].
BOZSO, F ;
AVOURIS, P .
PHYSICAL REVIEW B, 1988, 38 (06) :3943-3947
[6]   HYDROGEN CHEMISORPTION ON SI(111)-(7X7) AND SI(111)-(1X1) SURFACES - A COMPARATIVE INFRARED STUDY [J].
CHABAL, YJ ;
HIGASHI, GS ;
CHRISTMAN, SB .
PHYSICAL REVIEW B, 1983, 28 (08) :4472-4479
[7]   INSITU MONITORING OF CRYSTAL-GROWTH BY REFLECTANCE DIFFERENCE SPECTROSCOPY [J].
COLAS, E ;
ASPNES, DE ;
BHAT, R ;
STUDNA, AA ;
HARBISON, JP ;
FLOREZ, LT ;
KOZA, MA ;
KERAMIDAS, VG .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :47-55
[8]   PI-BONDED DIMERS, PREFERENTIAL PAIRING, AND 1ST-ORDER DESORPTION-KINETICS OF HYDROGEN ON SI(100)-(2X1) [J].
DEVELYN, MP ;
YANG, YML ;
SUTCU, LF .
JOURNAL OF CHEMICAL PHYSICS, 1992, 96 (01) :852-855
[9]   REAL-TIME MONITORING OF A SURFACE-REACTION IN GERMANIUM FILM GROWTH [J].
ERES, D ;
SHARP, JW .
APPLIED PHYSICS LETTERS, 1992, 60 (22) :2764-2766
[10]   INVESTIGATION OF THE KINETICS OF DIGERMANE CHEMISORPTION AND REACTION-PRODUCT DESORPTION IN THIN-FILM GROWTH OF GERMANIUM [J].
ERES, G ;
SHARP, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (05) :2463-2471