KINETICS OF HYDROGEN DESORPTION FROM SI(100) AND SI(111) SURFACES FOLLOWING CHEMISORPTION OF DISILANE AND TRISILANE

被引：15

作者：

SHARP, JW ^{[1
]}

ERES, G ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

SURFACE SCIENCE | 1994年 / 320卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)00515-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The kinetics of hydrogen desorption from Si(100) and Si(111) surfaces during epitaxial silicon thin film growth from disilane and trisilane was investigated using differential surface reflectance. For both source molecules, first-order hydrogen desorption was observed from Si(100), and an intermediate reaction order was found on Si(111).

引用

收藏

页码：169 / 173

页数：5

相关论文

共 29 条

[11] ADSORPTION-KINETICS OF SIH4, SI2H6 AND SI3H8 ON THE SI(111)-(7X7) SURFACE [J].

GATES, SM .

SURFACE SCIENCE, 1988, 195 (1-2) :307-329

[12] DESORPTION OF HYDROGEN FROM SI(100)2X1 AT LOW COVERAGES - THE INFLUENCE OF PI-BONDED DIMERS ON THE KINETICS [J].

HOFER, U ;

LI, LP ;

HEINZ, TF .

PHYSICAL REVIEW B, 1992, 45 (16) :9485-9488

[13] ADSORPTION OF ATOMIC OXYGEN (N2O) ON A CLEAN SI(100) SURFACE AND ITS INFLUENCE ON THE SURFACE-STATE DENSITY - A COMPARISON WITH O-2 [J].

KEIM, EG ;

WOLTERBEEK, L ;

VANSILFHOUT, A .

SURFACE SCIENCE, 1987, 180 (2-3) :565-598

[14] AS AND P DESORPTION FROM III-V SEMICONDUCTOR SURFACE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION STUDIED BY SURFACE PHOTOABSORPTION [J].

KOBAYASHI, N ;

KOBAYASHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1699-L1701

[15]

KOBAYASHI Y, 1991, JPN J APPL PHYS, V31, pL71

[16] MACROSCOPIC APPROACH TO THE THEORY OF REFLECTIVITY [J].

LANGRETH, DC .

PHYSICAL REVIEW B, 1989, 39 (14) :10020-10027

[17] SCANNING-TUNNELING-MICROSCOPY STUDIES OF DISILANE ADSORPTION AND PYROLYTIC GROWTH ON SI(100)-(2X1) [J].

LIN, DS ;

HIRSCHORN, ES ;

CHIANG, TC ;

TSU, R ;

LUBBEN, D ;

GREENE, JE .

PHYSICAL REVIEW B, 1992, 45 (07) :3494-3498

[18] DIFFERENTIAL REFLECTION SPECTROSCOPY OF VERY THIN SURFACE FILMS [J].

MCINTYRE, JD ;

ASPNES, DE .

SURFACE SCIENCE, 1971, 24 (02) :417-&

[19] LOW-TEMPERATURE SI AND SI-GE EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION - PROCESS FUNDAMENTALS [J].

MEYERSON, BS .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1990, 34 (06) :806-815

[20] DESORPTION-KINETICS OF HYDROGEN FROM THE SI(111)7X7 SURFACE [J].

REIDER, GA ;

HOFER, U ;

HEINZ, TF .

JOURNAL OF CHEMICAL PHYSICS, 1991, 94 (05) :4080-4083