SCANNING-TUNNELING-MICROSCOPY STUDIES OF DISILANE ADSORPTION AND PYROLYTIC GROWTH ON SI(100)-(2X1)

被引：75

作者：

LIN, DS

HIRSCHORN, ES

CHIANG, TC

TSU, R

LUBBEN, D

GREENE, JE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,DEPT MAT SCI,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.45.3494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy has been employed to study the adsorption of disilane (Si2H6) and pyrolytic growth on Si(100)-(2 x 1) at various temperatures. Room-temperature exposures result in a random distribution of dissociation fragments on the surface. Formation of anisotropic monohydride islands and denuded zones as well as island coarsening is observed at higher temperatures. The results are strikingly similar to those reported for growth by molecular-beam epitaxy using pure Si, even though different surface reactions are involved in these two growth processes.

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页码：3494 / 3498

页数：5

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