DIRECT EVIDENCE OF CARBON PRECIPITATES IN GAAS AND INP

被引：24

作者：

MOLL, AJ ^{[1
]}

HALLER, EE ^{[1
]}

AGER, JW ^{[1
]}

WALUKIEWICZ, W ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.112123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectra of carbon-doped GaAs and InP show two peaks which are characteristic of C clusters with sp2 bonding. The peaks are seen in C-implanted GaAs and InP following either rapid thermal annealing or furnace annealing. The peaks are also seen in heavily doped epilayers following furnace annealing. Various mechanisms for C precipitation are discussed. Experimental evidence suggests that the loss of the group V component at the surface during annealing may play a role in the precipitation of C.

引用

页码：1145 / 1147

页数：3

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