SELECTIVE AREA DEPOSITION OF SILICON-NITRIDE AND SILICON-OXIDE BY LASER CHEMICAL VAPOR-DEPOSITION AND FABRICATION OF MICROLENSES

被引：8

作者：

SUGIMURA, A ^{[1
]}

FUKUDA, Y ^{[1
]}

HANABUSA, M ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TENPAKUKU,TOYOHASHI,AICHI 440,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3222 / 3227

页数：6

共 10 条

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[9] PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 FILM USING DIRECT EXCITATION PROCESS BY DEUTERIUM LAMP [J].

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[10] SELECTIVE AREA LASER CVD OF SILICON-NITRIDE AND OXIDE AND ITS APPLICATION TO MICROLENSES [J].

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