INP-SIO2 METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PARAMETERS INVESTIGATED WITH DLTS AND OTHER CAPACITANCE TECHNIQUES

被引：5

作者：

BOGDANSKI, P ^{[1
]}

MURRAY, F ^{[1
]}

PIEL, JP ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 64卷 / 04期

关键词：

D O I：

10.1016/0038-1098(87)90748-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：411 / 416

页数：6

共 15 条

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[10]

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