DETERMINATION OF HIGH-DENSITY INTERFACE STATE PARAMETERS IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：46

作者：

MURRAY, F

CARIN, R

BOGDANSKI, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.337564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3592 / 3598

页数：7

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