DEEP LEVEL TRANSIENT SPECTROSCOPY OF INTERFACE AND BULK TRAP STATES IN INP METAL-OXIDE SEMICONDUCTOR STRUCTURES

被引：19

作者：

INUISHI, M

WESSELS, BW

机构：

[1] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201

[2] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201

来源：

THIN SOLID FILMS | 1983年 / 103卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90431-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：141 / 153

页数：13

相关论文

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