CLASSIFICATION OF MIS STRUCTURES (AL-SI3N4-GAAS) USING DIFFERENT CAPACITIVE METHODS

被引：4

作者：

BOGDANSKI, P

CARIN, R

GARDAIS, O

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 80卷 / 01期

关键词：

D O I：

10.1002/pssa.2210800120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：185 / 193

页数：9

相关论文

共 23 条

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[2] CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[3] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS
CHANTRE, A
VINCENT, G
DUBOIS
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5335 - 5359
[4] FRIEDEL P, 1983, VIDE COUCHES MINCES, V216, P141
[5] DYNAMIC PROPERTIES OF INTERFACE-STATE BANDS IN GAAS ANODIC MOS SYSTEM
HASEGAWA, H
SAWADA, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1478 - 1482
[6] PHOTO-IONIZATION AND THERMAL-ACTIVATION OF COMPOUND SEMICONDUCTOR MOS INTERFACES AND ORIGIN OF INTERFACE STATES
HASEGAWA, H
SAWADA, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 457 - 462
[7] INTERPRETATION OF ELECTRICAL MEASUREMENTS ON GAAS-MOS SYSTEM
KOHN, E
HARTNAGEL, HL
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 409 - 416
[8] ANODIC-OXIDATION OF GAAS IN AN OXYGEN PLASMA GENERATED BY A DC ELECTRICAL-DISCHARGE
KOSHIGA, F
SUGANO, T
[J]. THIN SOLID FILMS, 1979, 56 (1-2) : 39 - 49
[9] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
KUHN, M
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +
[10] INTERFACE-STATE CHARACTERISTICS OF GAN/GAAS MIS CAPACITORS
LAKSHMI, E
BHATTACHARYYA, AB
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (08) : 811 - 815